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BSZ068N06NS - 60V MOSFET

Description

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Features

  • Optimized for high performance SMPS, e. g. sync. rec.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription

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BSZ068N06NS MOSFET OptiMOSTMPower-Transistor,60V Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 6.8 mΩ ID 63 A QOSS 19 nC QG(0V..10V) 17 nC TSDSON-8FL(S3O8) S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSZ068N06NS Package PG-TSDSON-8 FL Marking 068N06N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.3,2020-12-21 OptiMOSTMPower-Transistor,60V BSZ068N06NS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . .
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