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BSZ0501NSI - MOSFET

Features

  • Optimized for high performance buck converters.
  • Monolithic integrated Schottky-like diode.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • 100% avalanche tested.
  • N-channel.
  • Qualified according to JEDEC1) for target.

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM5Power-MOSFET,30V BSZ0501NSI DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description Features •Optimizedforhighperformancebuckconverters •MonolithicintegratedSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 2.0 mΩ ID 40 A QOSS 18 nC QG(0V..4.5V) 11.
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