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BSZ025N04LS - MOSFET

Features

  • Optimized for synchronous rectification.
  • Very low on-resistance RDS(on).
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel, logic level.
  • Qualified according to JEDEC1) for target.

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,40V BSZ025N04LS DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTMPower-MOSFET,40V BSZ025N04LS 1Description Features •Optimizedforsynchronousrectification •Verylowon-resistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilitywithenlargedsourceinterconnection TSDSON-8FL (enlarged source interconnection) Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 2.5 mΩ ID 40 A QOSS 33 nC QG(0V..
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