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BSC117N08NS5
MOSFET
OptiMOSTM5Power-Transistor,80V
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 80
V
RDS(on),max
11.7
mΩ
ID 49 A
Qoss
19
nC
QG(0V..10V)
15
nC
SuperSO8
8 7 65
56 78
1 23 4
4321
S1 8D S2 7D S3 6D G4 5D
Type/OrderingCode BSC117N08NS5
Package PG-TDSON-8
Marking 117N08NS
RelatedLinks -
1) J-STD20 and JESD22 Final Data Sheet
1
Rev.2.1,2020-02-07
OptiMOSTM5Power-Transistor,80V
BSC117N08NS5
TableofContents
Description . . . . . . . . . . . . . . . . . .