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BSC098N10NS5 - MOSFET

Description

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Features

  • Optimized for high performance SMPS, e. g. sync. rec.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel.
  • Qualified according to JEDEC1) for target.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSC098N10NS5 MOSFET OptiMOSTM5Power-Transistor,100V Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 9.8 mΩ ID 60 A Qoss 30 nC QG(0V..10V) 22 nC SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC098N10NS5 Package PG-TDSON-8 Marking 098N10NS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.2,2020-02-07 OptiMOSTM5Power-Transistor,100V BSC098N10NS5 TableofContents Description . . . . . . . . . . . . . . . . . .
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