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BSC036NE7NS3 - 75V MOSFET

Description

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Features

  • Optimized technology for synchronous rectification.
  • Ideal for high frequency switching and DC/DC converters.
  • Excellent gate charge x RDS(on) product (FOM).
  • Superior thermal resistance.
  • N-channel, normal level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSC036NE7NS3G MOSFET OptiMOSTM3Power-Transistor,75V Features •Optimizedtechnologyforsynchronousrectification •IdealforhighfrequencyswitchingandDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 75 V RDS(on),max 3.6 mΩ ID 159 A SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC036NE7NS3 G Package PG-TDSON-8 Marking 036NE7NS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.
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