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BSC035N10NS5 - MOSFET

Description

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Features

  • Optimized for high performance SMPS, e. g. sync. rec.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel.
  • Qualified according to JEDEC1) for target.

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BSC035N10NS5 MOSFET OptiMOSTM5Power-Transistor,100V Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 3.5 mΩ ID 155 A Qoss 91 nC QG(0V..10V) 70 nC PG-TDSON-8 8 7 6 5 5 6 7 8 Pin 1 2 3 4 4 3 2 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode BSC035N10NS5 Package PG-TDSON-8 Marking 035N10NS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.
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