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BSC027N10NS5
MOSFET
OptiMOSTMPower-Transistor,100V
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •175°Crated
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
2.7
mΩ
ID
194
A
Qoss
114
nC
QG(0V..10V)
89
nC
PG-TSON-8-3
8 7
6 5
5 6 7 8
Pin 1
2 3 4
4
3 2 1
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode BSC027N10NS5
Package PG-TSON-8-3
Marking 027N10N
RelatedLinks -
Final Data Sheet
1
Rev.2.