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BSC012N06NS - 60V MOSFET

Description

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Features

  • Optimized for synchronous rectification.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel.
  • 175°C rated.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21.
  • Higher solder joint reliability due to enlarged source interconnection Product validation Fully qualified according to JEDEC for Industrial.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSC012N06NS MOSFET OptiMOSTM5Power-Transistor,60V Features •Optimizedforsynchronousrectification •100%avalanchetested •Superiorthermalresistance •N-channel •175°Crated •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Highersolderjointreliabilityduetoenlargedsourceinterconnection Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 1.2 mΩ ID 306 A QOSS 122 nC QG(0V..10V) 115 nC TSON-8-3 8 7 6 5 5 6 7 8 Pin 1 2 3 4 4 3 2 1 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC012N06NS Package TSON-8-3 Marking 012N06N RelatedLinks - Final Data Sheet 1 Rev.2.
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