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BGSX22G5A10 - DPDT Antenna Cross Switch

Description

The BGSX G A RF MOS switch is specifically designed for LTE and WCDMA triple antenna applications.

This DPDT o ers low insertion loss and low harmonic generation paired with high isolation between RF ports.

The switch is controlled via a GPIO interface.

Features

  • RF CMOS DPDT antenna cross switch with power handling capability of up to dBm.
  • Suitable for multi-mode LTE and WCDMA multi antenna.

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Full PDF Text Transcription

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BGSX G A DPDT Antenna Cross Switch Features • RF CMOS DPDT antenna cross switch with power handling capability of up to dBm • Suitable for multi-mode LTE and WCDMA multi antenna applications • Ultra-low insertion loss and harmonics generation • . to . GHz coverage • High port-to-port-isolation • No decoupling capacitors required if no DC applied on RF lines • General Purpose Input-Output (GPIO) Interface • Small form factor . mm x . mm • No power supply blocking required • High EMI robustness • RoHS and WEEE compliant package . x . mm Product Validation Qualified for industrial applications according to the relevant tests of JEDEC / / . Block diagram RF1 RF3 VDD GND DPDT GPIO Controller RF2 RF4 CTRL Data Sheet www.infineon.
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