Datasheet4U Logo Datasheet4U.com

BGA7P220 - Pre Driver

Description

The product is a stand-alone pre-driver in package.

The pre-driver is a two-stage amplifier designed to be used in the 5G Tx line-up for base station applications as the pre-driver for the Doherty power amplifier.

It has been designed in the INFINEON SiGe technology.

Features

  • Operation frequency range: 2300 to 2700MHz.
  • Gain: 34.4dB.
  • Output P1dB: 27.5dBm.
  • 100Ω di erential input.
  • 3.3V supply voltage.
  • TSNP-16 leadless package (3.0 x 3.0 mm2).
  • SiGe Technology Potential.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BGA7024 400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier NXP
BGA7027 high linearity silicon amplifier NXP Semiconductors
BGA7124 high linearity silicon amplifier NXP
BGA7127 high linearity silicon amplifier NXP
BGA7130 high linearity silicon amplifier NXP

Other Datasheets by Infineon

Part Number Description
BGA711N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA
BGA713N7 Single-Band UMTS LNA
BGA715N7 Silicon Germanium Low Noise Amplifier
BGA725L6 Silicon Germanium Low Noise Amplifier
BGA728L7 Broadband Low Noise Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BGA7P220 Pre-Driver for Doherty Power Amplifier Features • Operation frequency range: 2300 to 2700MHz • Gain: 34.4dB • Output P1dB: 27.5dBm • 100Ω di erential input • 3.3V supply voltage • TSNP-16 leadless package (3.0 x 3.0 mm2) • SiGe Technology Potential Application • 5G m-MIMO • Mobile Infrastructure Product Validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Block diagram RFINP RFINN VCC1 VCC2 RFOUT Bias Circuit EN GND Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 1.
Published: |