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BGA7H1N6 - Silicon Germanium Low Noise Amplifier

Features

  • . . 7 1 Maximum Ratings.
  • . . . . 9 2 Electrical Characteristics.
  • . . 10 2.1 Measured RF Characteristics Band 7.

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Datasheet Details

Part number BGA7H1N6
Manufacturer Infineon
File Size 1.17 MB
Description Silicon Germanium Low Noise Amplifier
Datasheet download datasheet BGA7H1N6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BGA7H1N6 Silicon Germanium Low Noise Amplifier for LTE Data Sheet Revision 3.1 (Min/Max), 2014-02-11 RF & Protection Devices Edition 2014-02-11 Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
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