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Linear Low Noise SiGe:C Bipolar RF Transistor
• High gain ultra low noise RF transistor • Based on Infineon's reliable high volume Silicon
Germanium technology
• Provides outstanding performance for a wide range of wireless applications up to 10 GHz
• Ideal for WLAN and all 5-6 GHz applications • High OIP3 and P-1dB for driver stages • High maximum stable and available gain
Gms = 21 dB at 1.8 GHz, Gma = 11.5 dB at 6 GHz • Pb-free (RoHS compliant) and halogen-free very thin
small leadless package (package height 0.32 mm max.
BFR750L3RH Datasheet
