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BBY55-03W - Silicon Tuning Diode

Download the BBY55-03W datasheet PDF. This datasheet also covers the BBY53 variant, as both devices belong to the same silicon tuning diode family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BBY53-InfineonTechnologiesAG.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BBY55-03W Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) Siemens Group
BBY55-02W Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) Siemens Group
BBY55 Silicon Tuning Diodes Infineon Technologies AG
BBY51 Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) Siemens Group
BBY51 Silicon Tuning Diode Infineon Technologies AG

Other Datasheets by Infineon

Part Number Description
BBY55-02V Silicon Tuning Diode
BBY55-02W Silicon Tuning Diode
BBY51-02L Silicon Tuning Diode
BBY51-02V Silicon Tuning Diode
BBY51-02W Silicon Tuning Diode

Full PDF Text Transcription

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Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • Very low capacitance spread • Pb-free (RoHS compliant) package BBY55... BBY55-02V BBY55-02W BBY55-03W  Type BBY55-02V BBY55-02W BBY55-03W Package SC79 SCD80 SOD323 Configuration single single single Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Forward current Operating temperature range Storage temperature VR IF Top Tstg LS(nH) 0.6 0.6 1.8 Marking 7 77 white 7 Value 16 20 -55 ... 150 -55 ... 150 Unit V mA °C 1 2011-06-15 BBY55... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min.
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