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BAR90-02EL
Single silicon RF PIN diode
Product description
This Infineon RF PIN diode provides high-voltage handling capabilities and comes with low loss and low distortion levels. Its low forward resistance, low capacitance and low inductance simplify design and support designers in creating smaller and lighter end-solutions.
Feature list
• Very low capacitance C = 0.23 pF (typical) at voltage VR = 0 V and frequency f = 1 GHz • Low forward resistance RF = 1.6 Ω (typical) at IF = 3 mA and frequency f = 100 MHz • Balanced ON / OFF harmonic distortion • TSLP-2-19 package (1 mm x 0.6 mm x 0.31 mm) with a 0402 foot print • Pb-free, RoHS compliant and halogen-free
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
BAR90-02EL Datasheet
