6ED2230S12T Datasheet PDF - Infineon 1200V Three Phase Gate Driver Specs

6ED2230S12T - 1200V Three Phase Gate Driver

Datasheet Summary

Description

The 6ED2230S12T is a high voltage, high speed IGBT with three independent high side and low side referenced output channels for three phase applications.

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Features

Infineon Thin-Film-SOI technology.
Fully operational to +1200 V.
Integrated Ultra‐fast Bootstrap Diode.
Floating channel designed for bootstrap operation.
Output source/sink current capability +0.35 A/‐0.65 A.
Tolerant to negative transient voltage up to -100 V (Pulse width is up 700 ns) given by SOI-technology.
Undervoltage lockout for both channels.
3.3 V, 5 V, and 15 V input logic compatible.
Over current prote.

Datasheet Details

Part number	6ED2230S12T
Manufacturer	Infineon
File Size	3.25 MB
Description	1200V Three Phase Gate Driver
Datasheet	6ED2230S12T Datasheet
Additional preview pages of the 6ED2230S12T datasheet.

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Full PDF Text Transcription

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6ED2230S12T 1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP Features • Infineon Thin-Film-SOI technology • Fully operational to +1200 V • Integrated Ultra‐fast Bootstrap Diode • Floating channel designed for bootstrap operation • Output source/sink current capability +0.35 A/‐0.65 A • Tolerant to negative transient voltage up to -100 V (Pulse width is up 700 ns) given by SOI-technology • Undervoltage lockout for both channels • 3.

Published: Apr 4, 2020 |