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EiceDRIVER™ 2EDF5215F, 2EDF5215G
250 V, 5 A/9 A high-side and low-side gate driver ICs
EiceDRIVER™ 2EDF5215F and 2EDF5215G are designed to drive low-side and high-side MOSFETs. A strong output stage, together with a low part-to-part skew and fast signal propagation makes these products ideal for use in fast-switching power systems. The inputs are independently controlled and can overlap enabling the use in synchronous rectifiers and full-bridge with diagonal driving scheme. The outputs are matched with a maximum 4 ns propagation delay enabling the use of lower dead-time in half-bridge and perfect synchronization in diagonal driving.
2EDF5215G Datasheet
