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2ED21834S06J - 650V half-bridge gate driver

Download the 2ED21834S06J datasheet PDF. This datasheet also covers the 2ED2182S06F variant, as both devices belong to the same 650v half-bridge gate driver family and are provided as variant models within a single manufacturer datasheet.

Description

The 2ED2182(4)S06F(J) is a half-bridge high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Features

  • Unique Infineon Thin-Film-Silicon on Insulator (SOI)-Technology.
  • Negative VS transient immunity of 100 V.
  • Floating channel designed for bootstrap operation.
  • Operating voltages (VS node) upto + 650 V.
  • Maximum bootstrap voltage (VB node) of + 675 V.
  • Integrated ultra-fast, low resistance bootstrap diode.
  • Logic Operational up to.
  • 11 V on VS Pin.
  • Negative Voltage Tolerance on Inputs of.
  • 5 V.
  • Independent under voltage lockout for both chann.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2ED2182S06F-Infineon.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Infineon

Part Number Description
2ED2183S06F 650V half-bridge gate driver
2ED21814S06J 650V high-side and low-side gate driver
2ED2181S06F 650V high-side and low-side gate driver
2ED21824S06J 650V half-bridge gate driver
2ED21824S06J 650V half-bridge gate driver

Full PDF Text Transcription

Click to expand full text
2ED2182 (4) S06F (J) 2ED2182 (4) S06F (J) 650 V half-bridge gate driver with integrated bootstrap diode Features  Unique Infineon Thin-Film-Silicon on Insulator (SOI)-Technology  Negative VS transient immunity of 100 V  Floating channel designed for bootstrap operation  Operating voltages (VS node) upto + 650 V  Maximum bootstrap voltage (VB node) of + 675 V  Integrated ultra-fast, low resistance bootstrap diode  Logic Operational up to –11 V on VS Pin  Negative Voltage Tolerance on Inputs of –5 V  Independent under voltage lockout for both channels  Schmitt trigger inputs with hysteresis  3.
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