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1EDI3035AS - Single channel isolated SiC-MOSFET driver

General Description

The EiceDRIVER™ gate driver 1EDI3035AS is a high voltage galvanic isolated SiC-MOSFET driver designed for high voltage automotive applications.

Key Features

  • Galvanic isolated SiC-MOSFET driver using coreless transformer technology.
  • Single channel driver for SiC-MOSFETs up to 1200 V.
  • Low propagation delay 60 ns typically.
  • Split outputs TON and TOFF for independent turn-on and turn-off slew rates.
  • Integrated booster with up to 20 A peak current rail-to-rail output.
  • Integrated active Miller clamp supports unipolar switching.
  • Configurable external soft turn-off functionality.
  • 12- b.

📥 Download Datasheet

Datasheet Details

Part number 1EDI3035AS
Manufacturer Infineon
File Size 1.12 MB
Description Single channel isolated SiC-MOSFET driver
Datasheet download datasheet 1EDI3035AS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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EiceDRIVER™ gate driver 1EDI3035AS Single channel isolated SiC-MOSFET driver Features • Galvanic isolated SiC-MOSFET driver using coreless transformer technology • Single channel driver for SiC-MOSFETs up to 1200 V • Low propagation delay 60 ns typically • Split outputs TON and TOFF for independent turn-on and turn-off slew rates • Integrated booster with up to 20 A peak current rail-to-rail output • Integrated active Miller clamp supports unipolar switching • Configurable external soft turn-off functionality • 12- bit ADC for temperature measurement or DC link measurement • CMTI up to 150 V/ns up to ±1200 V • Reinforced insulation 8 kV peak according to DIN EN IEC 60747-17 (VDE 0884-17):2021-10 • 5.