1EDI20N12AF - Single Channel MOSFET and GaN HEMT Gate Driver

Infineon

General Description

Key Features

. . 13 Undervoltage Lockout (UVLO).
. . . 13 Active Shut-Down.
. . 13 Short Circuit Clamping.
.

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1EDI20N12AF single channel mosfet and gan hemt gate driver by Infineon - Datasheet Preview

Datasheet Details

Part number	1EDI20N12AF
Manufacturer	Infineon
File Size	1.67 MB
Description	Single Channel MOSFET and GaN HEMT Gate Driver
Datasheet	1EDI20N12AF Datasheet

Other Datasheets by Infineon

Part Number	Description
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1EDI2004AS	High Voltage IGBT Driver
1EDI20H12AH	Single channel IGBT gate driver
1EDI20I12AF	Single channel isolated gate driver
1EDI20I12AH	Single channel IGBT gate driver
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1EDI20I12MH	Single channel IGBT gate driver
1EDI20I12SV	High voltage gate driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1EDI EiceDRIVER™ Compact 1EDI20N12AF Single Channel MOSFET and GaN HEMT Gate Driver IC 1EDI20N12AF Data Sheet Rev. 2.0, 2015-06-01 Industrial Power Control Edition 2015-06-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.