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12M1H060 - 1200V SiC Trench MOSFET

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Infineon

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12M1H060 1200V SiC Trench MOSFET by Infineon - Datasheet Preview — Datasheet preview – 12M1H060

Datasheet Details

Part number	12M1H060
Manufacturer	Infineon
File Size	1.20 MB
Description	1200V SiC Trench MOSFET
Datasheet	12M1H060 Datasheet
Additional preview pages of the 12M1H060 datasheet.

Product details

Features

Very low switching losses.
Threshold-free on state characteristic.
Benchmark gate threshold voltage, VGS(th) = 4.5V.
0V turn-off gate voltage for easy and simple gate drive.
Fully controllable dV/dt.
Robust body diode for hard commutation.
Temperature independent turn-off switching losses.
Sense pin for optimized switching performance Gate pin 4 Sense pin 3 Drain pin 1 Source pin 2 Benefits.
Efficiency improvement.
Enabling higher frequency.

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Published: Dec 31, 2020 |