Datasheet4U.com

111N15N - Power-Transistor

Product Overview

Infineon

📥 Download Datasheet

111N15N Power-Transistor by Infineon - Datasheet Preview — Datasheet preview – 111N15N

Datasheet Details

Part number	111N15N
Manufacturer	Infineon
File Size	736.14 KB
Description	Power-Transistor
Datasheet	111N15N Datasheet
Additional preview pages of the 111N15N datasheet.

Product details

Features

N-channel, normal level.
Excellent gate charge x R DS(on) product (FOM).
Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 150 V 10.8 mW 83 A.
175 °C operating temperature.
Pb-free lead plating; RoHS compliant; Halogen free.
Qualified according to JEDEC1) for target.

📁 Similar Datasheet

111N15N - N-Channel MOSFET (VBsemi)
1110A - Single Phase Bridge (ETC)
1110B - (1110xB) Single Phase Bridge (VMI)
1110C - (1110xC) Single Phase Bridge (VMI)
1110D - (1110xD) Single Phase Bridge (VMI)
1110E - (1110xE) Single Phase Bridge (VMI)
1110F - (1110xF) Single Phase Bridge (VMI)
1110FA - 200V - 1000V Single Phase Bridge (ETC)

Other Datasheets by Infineon

Published: Sep 27, 2024 |