042N10N
Features
- N-channel,normallevel
- Excellentgatechargex RDS(on)product(FOM)
- Verylowon-resistance RDS(on)
- 175°Coperatingtemperature
- Pb-freeleadplating;Ro HSpliant
- Qualifiedaccordingto JEDEC1)fortargetapplication
- Idealforhigh-frequencyswitchingandsynchronousrectification
- Halogen-freeaccordingto IEC61249-2-21
Table1Key Performance Parameters
Parameter
Value
Unit
RDS(on),max
4.2 mΩ
D²PAK
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/Ordering Code IPB042N10N3 G
Package PG-TO 263-3
Marking 042N10N
Related Links
- 1) J-STD20 and JESD22
Final Data Sheet
Rev.2.9,2017-07-17
Opti MOSª3Power-Transistor,100V
IPB042N10N3G
Tableof Contents
Description
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