Click to expand full text
SPW20N60CFD Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme d v/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge VDS @ Tjmax RDS(on) ID 650 0.22 20.7
P-TO247
V Ω A
Type SPW20N60CFD
Package P-TO247
Ordering Code Q67040-S4617
Marking 20N60CFD
Maximum Ratings Parameter Continuous drain current T C = 25 °C T C = 100 °C Pulsed drain current, t p limited by T jmax Avalanche energy, single pulse ID = 10 A, V DD = 50 V Avalanche energy, repetitive t AR limited by T jmax 1) EAR ID = 20 A, V DD = 50 V Avalanche current, repetitive t AR limited by T jmax Reverse diode d v/dt
IS=20.7A, V DS=480V, T j=125°C
Symbol ID
Value 20.7 13.
SPW20N60CFD Datasheet
