Datasheet4U Logo Datasheet4U.com

SPP80N06S2-05 - Power-Transistor

Datasheet Summary

Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

📥 Download Datasheet

Datasheet preview – SPP80N06S2-05

Datasheet Details

Part number SPP80N06S2-05
Manufacturer Infineon Technologies
File Size 345.50 KB
Description Power-Transistor
Datasheet download datasheet SPP80N06S2-05 Datasheet
Additional preview pages of the SPP80N06S2-05 datasheet.

📁 Similar Datasheet

  • SPP80N06S2-09 - N-Channel MOSFET (INCHANGE)
  • SPP80N03 - SIPMOS Power Transistor (Siemens Semiconductor)
  • SPP80N03L - Power Transistor (Siemens Semiconductor)
  • SPP80N08S2-07 - N-Channel MOSFET (VBsemi)
  • SPP80P06P - P-Channel MOSFET (INCHANGE)
  • SPP8525 - P-Channel MOSFET (SYNC POWER)
  • SPP8625 - P-Channel MOSFET (SYNC POWER)
  • SPP8635 - P-Channel MOSFET (SYNC POWER)
  • SPP8637 - P-Channel MOSFET (SYNC POWER)
  • SPP8803 - P-Channel MOSFET (SYNC POWER)
Other Datasheets by Infineon Technologies

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com SPP80N06S2-05 SPB80N06S2-05 Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 OptiMOS® Power-Transistor Feature • N-Channel 55 4.8 80 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N06S2-05 SPB80N06S2-05 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67040-S4245 Q67040-S4255 Marking 2N0605 2N0605 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 320 810 30 6 ±20 300 -55...
Published: |