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Preliminary data
SPP17N80C2 SPB17N80C2
Cool MOS™ Power Transistor
Feature
· · · · · · ·
C O OLMOS
Power Semiconductors
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity
P-TO263-3-2
Product Summary
VDS R DS(on) ID
800 290 17
V mW A
Type SPP17N80C2 SPB17N80C2
Package P-TO220-3-1 P-TO263-3-2
Ordering Code Q67040-S4353 Q67040-S4354
Maximum Ratings, at T j = 25 °C, unless otherwise specified Parameter Continuous drain current
TC = 25 °C TC = 100 °C
Pulsed drain current, tp limited by T jmax Avalanche energy, single pulse
ID=4A, V DD=50V
Avalanche energy, repetitive t AR limited by Tjmax1)
ID=17A, VDD=50V
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SPP17N80C2 Datasheet
