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SPI20N60CFD Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme d v/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge VDS @ Tjmax RDS(on) ID 650 0.22 20.7
PG-TO262
V Ω A
Type SPI20N60CFD Maximum Ratings Parameter
Package PG-TO262
Pb-free Yes
Marking 20N60CFD
Symbol ID
Value 20.7 13.1 52 690 1 20 40 ±20 ±30 208 -55... +150
Unit A
Continuous drain current T C = 25 °C T C = 100 °C Pulsed drain current, t p limited by T jmax
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SPI20N60CFD Datasheet
