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Preliminary data
SPI10N10 SPP10N10,SPB10N10
SIPMOS Power-Transistor
Feature
N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated
P-TO262-3-1 P-TO263-3-2
Product Summary VDS R DS(on) ID 100 170 10.3
P-TO220-3-1
V A
m
Type SPP10N10 SPB10N10 SPI10N10
Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1
Ordering Code Q67042-S4118 Q67042-S4119 Q67042-S4120
Marking 10N10 10N10 10N10
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TC=25°C TC=100°C
Symbol ID
Value 10.3 7.8
Unit A
Pulsed drain current
TC=25°C
ID puls EAS dv/dt VGS Ptot Tj , Tstg
41.2 60 6 ±20 50 -55... +175 55/175/56 mJ kV/µs V W °C
Avalanche energy, single pulse
ID =10.3 A , VDD =25V, RGS =25
Reverse diode dv/dt
IS =10.
SPI10N10 Datasheet
