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SPB10N10 - SIPMOS Power-Transistor

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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Datasheet Details

Part number SPB10N10
Manufacturer Infineon
File Size 787.37 KB
Description SIPMOS Power-Transistor
Datasheet download datasheet SPB10N10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary data SPI10N10 SPP10N10,SPB10N10 SIPMOS Power-Transistor Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS R DS(on) ID 100 170 10.3 P-TO220-3-1 V A m Type SPP10N10 SPB10N10 SPI10N10 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4118 Q67042-S4119 Q67042-S4120 Marking 10N10 10N10 10N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 10.3 7.8 Unit A Pulsed drain current TC=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg 41.2 60 6 ±20 50 -55... +175 55/175/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =10.3 A , VDD =25V, RGS =25 Reverse diode dv/dt IS =10.