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SIGC32T120R3L - IGBT

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

Features

  • 1200V Trench + Field Stop technology.
  • 120µm chip.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling 3 This chip is used for:.
  • power module C.

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Full PDF Text Transcription

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www.DataSheet4U.com SIGC32T120R3L IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC32T120R3L VCE 1200V ICn 25A Die Size 6.5 x 4.87 mm2 Package sawn on foil Ordering Code Q67050A4206-A101 MECHANICAL PARAMETER: Raster size Emitter pad size ( include gate pad ) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 6.5 x 4.87 3.4 x 4.99 1.14 x 1.14 31.6 / 21.
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