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SIGC186T170R3 - IGBT

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

Features

  • 1700V Trench + Field Stop technology.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling 3 This chip is used for:.
  • power module C.

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Full PDF Text Transcription

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www.DataSheet4U.com SIGC186T170R3 IGBT Chip FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC186T170R3 VCE ICn Die Size 13.63 x 13.63 mm2 Package sawn on foil Ordering Code Q67050A4148-A001 1700V 150A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 13.63 x 13.63 8 x ( 5.62 x 2.71 ) 1.12 x 1.12 185.8 / 149.
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