Datasheet4U Logo Datasheet4U.com

SIGC16T120CL - IGBT

General Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

Key Features

  • 1200V NPT technology.
  • 180µm chip.
  • short circuit prove.
  • positive temperature coefficient.
  • easy paralleling C This chip is used for:.
  • chip only.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SIGC100T60R3E IGBT Infineon
SIGC100T65R3E IGBT Infineon
SIGC101T170R3E IGBT Infineon
SIGC109T120R3E IGBT Infineon
SIGC109T120R3LE IGBT Infineon

Other Datasheets by Infineon

Part Number Description
SIGC16T120C IGBT
SIGC16T120CS IGBT
SIGC101T170R3 IGBT
SIGC104T170R2C IGBT
SIGC109T120R3 IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com SIGC16T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling C This chip is used for: • chip only Applications: • drives G E Chip Type SIGC16T120CL VCE 1200V ICn 8A Die Size 4.04 x 4 mm2 Package sawn on foil Ordering Code Q67041-A4703A003 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 4.04 x 4 16.16 / 10.4 1.88 x 2.18 0.71x1.