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K50H603 - IGBT

General Description

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Key Features

  • C.

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Full PDF Text Transcription for K50H603 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K50H603. For precise diagrams, and layout, please refer to the original PDF.

IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode IKW50N60H3 600Vhighspeedswitchingseriesthirdgeneration...

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leldiode IKW50N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IKW50N60H3 Highspeedswitchingseriesthirdgeneration HighspeedIGBTinTrenchandFieldstoptechnology  Features: C TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpiceModels: http://www.infineon.

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