IPS65R1K0CE - MOSFET

Features

Extremely low losses due to very low FOM Rdson.
Qg and Eoss.
Very high commutation ruggedness.
Easy to use/drive.
Pb-free plating, Halogen free mold compound.
Qualified for standard grade.

Infineon Technologies

Datasheet Details

Part number	IPS65R1K0CE
Manufacturer	Infineon Technologies
File Size	1.08 MB
Description	MOSFET
Datasheet	IPS65R1K0CE Datasheet
Additional preview pages of the IPS65R1K0CE datasheet.

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Full PDF Text Transcription

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IPS65R1K0CE MOSFET 650VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket.

Published: Feb 1, 2016 |