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IPP410N30N - MOSFET

Features

  • N-channel, normal level.
  • Fast Diode with reduced Qrr.
  • Optimized for hard commutation ruggedness.
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription

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MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,300V IPP410N30N DataSheet Rev.2.
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