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IPP126N10N3G - Power-Transistor

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on).
  • 175 °C operating temperature Product Summary V DS R DS(on),max TO-263 ID 100 V 12.3 mΩ 58 A.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription

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IPP126N10N3 G IPB123N10N3 G IPI126N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature Product Summary V DS R DS(on),max TO-263 ID 100 V 12.
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