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IPP100N06S3L-03 - Power-Transistor

Download the IPP100N06S3L-03 datasheet PDF. This datasheet also covers the IPB-100N variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Description

and charts stated herein.

Warnings Due to technical requirements, components may contain dangerous substances.

Features

  • N-channel - Logic Level - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green package (lead free).
  • Ultra low Rds(on).
  • 100% Avalanche tested.
  • ESD Class 3 (HBM) EIA/JESD22-A114-B Product Summary V DS R DS(on),max (SMD version) ID 55 2.7 100 V mΩ A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 Package PG-TO263-3-2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPB-100N-06S3L.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Infineon

Part Number Description
IPP100N06S3-03 Power-Transistor
IPP100N06S2-05 Power-Transistor
IPP100N06S2L-05 Power-Transistor
IPP100N04S2-04 Power-Transistor
IPP100N04S2L-03 Power-Transistor

Full PDF Text Transcription

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www.DataSheet4U.com IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS®-T Power-Transistor Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested • ESD Class 3 (HBM) EIA/JESD22-A114-B Product Summary V DS R DS(on),max (SMD version) ID 55 2.
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