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IPI051NE8NG - Power-Transistor

This page provides the datasheet information for the IPI051NE8NG, a member of the IPB-051NE Power-Transistor family.

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Datasheet Details

Part number IPI051NE8NG
Manufacturer Infineon Technologies
File Size Direct Link
Description Power-Transistor
Datasheet download datasheet IPI051NE8NG Datasheet
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www.DataSheet4U.com IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO 263) ID 85 5.
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