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IDB10S60C - 2nd Generation thinQ SiC Schottky Diode

Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • Switching behavior benchmark.
  • No reverse recovery/ No forward recovery.
  • No temperature influence on the switching behavior.
  • High surge current capability.
  • Pb-free lead plating; RoHs compliant www. DataSheet4U. net Product Summary V DC Qc IF 600 24 10 V nC A D2PAK.
  • Qualified according to JEDEC1) for target.

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Datasheet Details

Part number IDB10S60C
Manufacturer Infineon
File Size 320.51 KB
Description 2nd Generation thinQ SiC Schottky Diode
Datasheet download datasheet IDB10S60C Datasheet

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Full PDF Text Transcription

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IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHs compliant www.DataSheet4U.
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