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H30R100 - Reverse Conducting IGBT

Features

  • 1.5V Forward voltage of monolithic body Diode.
  • Full Current Rating of monolithic body Diode.
  • Specified for TJmax = 175°C.
  • Trench and Fieldstop technology for 1000 V.

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Datasheet Details

Part number H30R100
Manufacturer Infineon
File Size 320.25 KB
Description Reverse Conducting IGBT
Datasheet download datasheet H30R100 Datasheet

Full PDF Text Transcription

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Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • 1.5V Forward voltage of monolithic body Diode • Full Current Rating of monolithic body Diode • Specified for TJmax = 175°C • Trench and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI • Qualified according to JEDEC1 for target applications • Pb-free lead plating; RoHS compliant Applications: • Microwave Oven • Soft Switching Applications IHW30N100R q C G E PG-TO-247-3 Type VCE IHW30N100R 1000V IC 30A VCE(sat),Tj=25°C 1.
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