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OptiMOS™3 P3-Power-Transistor
Features • single P-Channel in SO8 • Qualified according JEDEC1) for target applications • 150°C operating temperature • V GS=25 V, specially suited for notebook applications • Pb-free plating; RoHS compliant • applications: battery management, load switching • Halogen-free according to IEC61249-2-21
BSO080P03NS3 G
Product Summary
VDS RDS(on),max
ID
VGS=-10 V VGS=-6 V
-30 V 8.0 mW 11.4 -14.
BSO080P03NS3G Datasheet
