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BSC600N25NS3 - MOSFET

Download the BSC600N25NS3 datasheet PDF. This datasheet also covers the BSC600N25NS3G variant, as both devices belong to the same mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

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Features

  • N-channel, normal level.
  • Excellent gate charge x RDS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BSC600N25NS3G_InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Infineon

Part Number Description
BSC600N25NS3G MOSFET
BSC014N06NS Power-Transistor
BSC016N03LSG Power-Transistor
BSC016N04LSG MOSFET
BSC017N04NSG Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BSC600N25NS3G MOSFET OptiMOSTM3Power-Transistor,250V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhigh-frequencyswitchingandsynchronousrectification Table1KeyPerformanceParameters Parameter Value Unit VDS 250 V RDS(on),max 60 mΩ ID 25 A PG-TDSON-8 8 7 6 5 5 6 7 8 Pin 1 2 3 4 4 3 2 1 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode BSC600N25NS3 G Package PG-TDSON-8 Marking 600N25NS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.
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