BSC152N10NSFG - Power-Transistor

Datasheet Summary

Features

Very low gate charge for high frequency.

Infineon Technologies

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Datasheet Details

Part number	BSC152N10NSFG
Manufacturer	Infineon Technologies
File Size	409.35 KB
Description	Power-Transistor
Datasheet	BSC152N10NSFG Datasheet
Additional preview pages of the BSC152N10NSFG datasheet.

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Full PDF Text Transcription

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OptiMOS®2 Power-Transistor Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application BSC152N10NSF G Product Summary V DS R DS(on),max ID 100 V 15.

Published: Nov 12, 2015 |