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OptiMOS® Power-Transistor
Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated
SPP77N06S2-12 SPB77N06S2-12
Product Summary
VDS
55 V
RDS(on)
12 mΩ
ID
80 A
P- TO263 -3-2
P- TO220 -3-1
Type SPP77N06S2-12 SPB77N06S2-12
Package
Ordering Code
P- TO220 -3-1 Q67060-S6029
P- TO263 -3-2 Q67060-S6030
Marking 2N0612 2N0612
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TC=25°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=77A, VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax1) Reverse diode dv/dt
IS=77A, VDS=44V, di/dt=200A/µs, Tjmax=175°C
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN
SPB77N06S2-12 Datasheet
