SGW20N60HS
SGP20N60HS SGW20N60HS
High Speed IGBT in NPT-technology
- 30% lower Eoff pared to previous generation
- Short circuit withstand time
- 10 µs
- Designed for operation above 30 k Hz
- NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
- - High ruggedness, temperature stable behaviour plete product spectrum and PSpice Models : http://.infineon./igbt/ VCE 600V 600V IC 20 20 Eoff 240µJ 240µJ Tj 150°C 150°C Package TO220AB TO-247AC Ordering Code Q67040-S4498 Q67040-S4499
P-TO-220-3-1 (TO-220AB) P-TO-247-3-1 (TO-247AC)
Type SGP20N60HS SGW20N60HS Maximum Ratings Parameter
Symbol VCE IC
Value 600 36 20
Unit V A
Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Avalanche energy single pulse IC = 20A, VCC=50V, RGE=25Ω start TJ=25°C Gate-emitter voltage static...
