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PTF211301A - LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz

Description

The PTF211301 is a 130

W, internally matched GOLDMOS FET intended for WCDMA applications.

and two

carrier WCDMA operation from 2110 to 2170 MHz.

Full gold metallization ensures excellent device lifetime and reliability.

Features

  • Broadband internal matching Typical two.
  • carrier WCDMA performance at 2140 MHz - Average output power = 28 W - Linear Gain = 13.5 dB - Efficiency = 25% - Intermodulation distortion =.
  • 37 dBc - Adjacent channel power =.
  • 42 dBc Typical CW performance, 2170 MHz, 28 V - Output power at P.
  • 1dB = 148 W - Efficiency = 50% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VS.

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Datasheet Details

Part number PTF211301A
Manufacturer Infineon Technologies AG
File Size 449.03 KB
Description LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
Datasheet download datasheet PTF211301A Datasheet

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Part Number Description
PTF211301 LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz
PTF211802 LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
PTF211802A LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
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Full PDF Text Transcription

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PTF211301 LDMOS RF Power Field Effect Transistor 130 W, 2110–2170 MHz Description The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • • Broadband internal matching Typical two–carrier WCDMA performance at 2140 MHz - Average output power = 28 W - Linear Gain = 13.
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