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PTF210301E - LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz

Description

The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz.

Full gold metallization ensures excellent device lifetime and reliability.

Features

  • Broadband internal matching Typical two.
  • carrier WCDMA performance - Average output power = 7.0 W - Gain = 16 dB - Efficiency = 25% - IM3 =.
  • 37 dBc Typical CW performance - Output power at P.
  • 1dB = 36 W - Gain = 15 dB - Efficiency = 53% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 30 W (CW) output power Two.
  • Carrier WCDMA Drive.
  • Up f = 2140 MH.

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Datasheet Details

Part number PTF210301E
Manufacturer Infineon Technologies AG
File Size 337.86 KB
Description LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
Datasheet download datasheet PTF210301E Datasheet

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Other Datasheets by Infineon Technologies AG

Part Number Description
PTF210301 LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210301A LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
PTF210451 LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
PTF210451E LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
PTF210901 LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz

Full PDF Text Transcription

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PTF210301 LDMOS RF Power Field Effect Transistor 30 W, 2110–2170 MHz Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • • Broadband internal matching Typical two–carrier WCDMA performance - Average output power = 7.
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