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BTS660P - Smart Highside High Current Power Switch

Description

N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology.

Providing embedded protective functions.

Features

  • Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO) Short circuit current limitation Current sense ratio Vbb(AZ) 70 V VON(CL) 62 V Vbb(on) 5.0 58 V RON 9 mΩ IL(ISO) 44 A IL(SC) 90 A IL : IIS 13 000 TO 220-7SMD.

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Datasheet Details

Part number BTS660P
Manufacturer Infineon Technologies AG
File Size 707.45 KB
Description Smart Highside High Current Power Switch
Datasheet download datasheet BTS660P Datasheet

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Full PDF Text Transcription

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PROFET® Data Sheet BTS660P Smart Highside High Current Power Switch Reversave • Reverse battery protection by self turn on of power MOSFET • Overload protection • Current limitation • Short circuit protection • Over temperature protection • Over voltage protection (including load dump) • Clamp of negative voltage at output • Fast deenergizing of inductive loads 1) • Low ohmic inverse current operation • Diagnostic feedback with load current sense • Open load detection via current sense • Loss of Vbb protection2) • Electrostatic discharge (ESD) protection Features Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO) Short circuit current limitation Current sense ratio Vbb(AZ) 70 V VON(CL) 62 V Vbb(on) 5.0 ...
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