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BTS442E2 - Smart Highside Power Switch

Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology.

Fully protected by embedded protection functions.

Features

  • Overload protection.
  • Current limitation.
  • Short-circuit protection.
  • Thermal shutdown.
  • Overvoltage protection (including load dump).
  • Fast demagnetization of inductive loads.
  • Reverse battery protection1).
  • Undervoltage and overvoltage shutdown with auto-restart and hysteresis.
  • Open drain diagnostic output.
  • Open load detection in ON-state.
  • CMOS compatible input.
  • Loss of ground and loss of Vbb.

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Datasheet Details

Part number BTS442E2
Manufacturer Infineon Technologies AG
File Size 211.48 KB
Description Smart Highside Power Switch
Datasheet download datasheet BTS442E2 Datasheet

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BTS441R Smart Highside Power Switch One Channel: 20m Status Feedback
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Full PDF Text Transcription

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PROFET® BTS 442 E2 Smart Highside Power Switch Features • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in ON-state • CMOS compatible input • Loss of ground and loss of Vbb protection2) • Electrostatic discharge (ESD) protection Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Current limitation Vbb(AZ) Vbb(on) RON IL(ISO) IL(SCr) 63 V 4.5 ...
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