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BTS120 - MOSFET

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Key Features

  • q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shortet to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 120 VDS 100 V ID 19 A RDS(on) 0.1 Ω Package TO-220AB Ordering Code C67078-A5009-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol.

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Datasheet Details

Part number BTS120
Manufacturer Infineon Technologies AG
File Size 445.86 KB
Description MOSFET
Datasheet download datasheet BTS120 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TEMPFET® BTS 120 Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shortet to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 120 VDS 100 V ID 19 A RDS(on) 0.1 Ω Package TO-220AB Ordering Code C67078-A5009-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 °C ISO drain current TC = 85 °C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 100 100 ± 20 19 3.5 76 55 800 75 – 55 ... + 150 E 55/150/56 K/W ≤ 1.67 ≤ 75 °C – W A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg – – TC = 25 °C Tj = – 55 ... + 150 °C Short circuit dissipation, Tj = – 55 ...